Fujio Masuoka, while working for Toshiba, proposed a new type of floating-gate memory that allowed entire sections of memory to be erased quickly and easily, by applying a voltage to a single wire connected to a group of cells.[11] This led to Masuoka's invention of flash memory at Toshiba in 1980.[15][17][18] According to Toshiba, the name "flash" was suggested by Masuoka's colleague, Shōji Ariizumi, because the erasure process of the memory contents reminded him of the flash of a camera.[19] Masuoka and colleagues presented the invention of NOR flash in 1984,[20][21] and then NAND flash at the IEEE 1987 International Electron Devices Meeting (IEDM) held in San Francisco.[22]