Multi-level cell (MLC) technology stores more than one bit in each memory cell. NEC demonstrated multi-level cell (MLC) technology in 1998, with an 80 Mb flash memory chip storing 2 bits per cell.[28] STMicroelectronics also demonstrated MLC in 2000, with a 64 MB NOR flash memory chip.[29] In 2009, Toshiba and SanDisk introduced NAND flash chips with QLC technology storing 4 bits per cell and holding a capacity of 64 Gbit.[30][31] Samsung Electronics introduced triple-level cell (TLC) technology storing 3-bits per cell, and began mass-producing NAND chips with TLC technology in 2010.[32]